Tungsten Carbide (CERMET)
Specimen Preparation (Class 11 Procedures)
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The key to proper specimen preparation of hard / tough CERMET materials such as tungsten carbide is to to grind with a semi-fixed abrasive (polycrystalline diamond on a metal mesh cloth), followed by combining diamond abrasive with a CMP (chemical mechanical polishing) abrasive such as SIAMAT colloidal silica. SECTIONING Diamond Wafering blade - medium grit / low concentration
MOUNTING
Castable Mounting with Epoxy or Acrylic resins
POLISHING
| Abrasive/surface | Lubricant | Force/ sample | Speed (Head/base) |
Time | Individual Force mode |
Central Force mode |
|---|---|---|---|---|---|---|
| 70 micron diamond grinding disk* |
Water | 5-10 lbs | 200/200 rpm | Planar |
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| 30 um DIAMAT diamond suspension on CERMESH Metal Mesh cloth |
DIALUBE Diamond Extender |
5-10 lbs | 200/200 rpm | 3 min |  |
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| 9 um DIAMAT diamond on POLYPAD polishing pad |
DIALUBE Diamond Extender |
5-10 lbs | 200/200 rpm | 3 min | |
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| 3 um DIAMAT diamond on TEXPAN polishing pad |
DIALUBE Diamond Extender |
10 lbs | 200/200 rpm | 3 min | |
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| SIAMAT Colloidal silca on TEXPAN polishing pad |
SIAMAT colloidal silica |
10 lbs | 200/200 rpm | 3 min | |
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*Required for central polishing force. Click here for more information on central vs. individual polishing force polishing.
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| Tungsten carbide, 1500X (DIC), etched with 50% HNO3 and 50% HCl |
ETCHING
Common Etchants
CAUTION:Safety is very important when etching. Be sure to wear the appropriate protective clothing and observe all WARNINGS on chemical manufacuters SDS (Safety Data Sheets). Also review the COMMENTS and CONDITIONS Section for each etchant.
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