Partially stabilized zirconia is actually a fairly easy material to prepare. Care must be taken not to produce excessive damage during cutting and initial grinding which may cause the stress induced crystal structure from the tetragonal phase to the monoclinic phase. To minimize sectioning damage it has been found that cutting zirconia at high loads (feed rates) and high speeds provides the best combination. Rough grinding is then accomplished with a metal mesh cloth and 30-micron polycrystalline diamond. Rough polishing with a POLYPAD pad or TEXPAN pad using a combination of 6-micron polycrystalline diamond and SIAMAT colloidal silica provide a chemical-mechanical-polishing (CMP) action. Final polishing on a DACRON cloth with 1-micron diamond and colloidal silica produces a surface ready for microstructural etching and examination.
SECTIONING
Diamond Wafering blade - medium grit / low concentration
MOUNTING
Castable Mounting with Epoxy or Acrylic resins
POLISHING
Abrasive/surface |
Lubricant |
Force/ sample |
Time |
| 30 um DIAMAT diamond suspension on CERMESH Metal Mesh cloth | 5 lbs | Until plane | |
| 6 um DIAMAT diamond on TEXPAN polishing pad | SIAMAT colloidal silica | 10 lbs | 5 minutes |
1 um DIAMAT diamond on GOLDPAD polishing pad |
SIAMAT colloidal silica |
10 lbs |
5 minutes |
SIAMAT Colloidal silca on TEXPAN polishing pad |
|
10 lbs |
5 minutes |
 |
Yittria stabilized Zirconia, 15,000X, thermally etched |