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Beryllium Oxide Electronic Package Specimen Preparation

Ceramics such as alumina, beryllia (BeO) and aluminum nitride (AlN) are commonly used ceramic substrate materials for metallizing because they provide thermal conductivity and electrical resistivity.

Microstructural cross section preparation of metallized layers are difficult because of edge rounding and phase relief. In order to maintain the integrity of the metallic layers, the specimen must first be sectioned properly to avoid chipping and cracking of the ceramic substrate/metal interface. The use of SIAMAT colloidal silica also provides a chemical mechanical polishing (CMP) action, which is the most effective means for eliminating both surface and subsurface damage.

SECTIONING

Diamond Wafering blade - medium grit / low concentration

MOUNTING
Castable Mounting with Epoxy or Acrylic resins

POLISHING

Abrasive/surface

Lubricant

Force/ sample

Speed
(Head/base)

Time

30 um Diamond Lapping Film POLYLUBE Diamond Extender 5-10 lbs

100/100 rpm

3 minutes
9 um Diamond Lapping Film POLYLUBE Diamond Extender 5-10 lbs

100/100 rpm

2 minutes
6 um DIAMAT diamond on TEXPAN polishing pad SIAMAT colloidal silica 5-10 lbs

100/100 rpm

5 minutes

1 um DIAMAT diamond on ATLANTIS polishing pad

SIAMAT colloidal silica

5-10 lbs

100/100 rpm

5 minutes

SIAMAT Colloidal silca on TEXPAN polishing pad

 

5-10 lbs

100/100 rpm

2 minutes


Metallographic micrograph of BeO ceramic package

BeO substrate with a nickel, copper coating

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